Improving ESD Immunity of RF/Antenna Applications at System Level

The new ESD0P4RFL transient voltage suppressor diode from Infineon overcomes the ESD (electrostatic discharge) problem in RF antenna and high-speed data transmission lines by providing outstanding protection in a very small form factor.

For any antenna exposed to the outside world, electrostatic discharges are a continuous threat to device reliability. For that reason it is mandatory for the elements located right after the antenna to be protected against ESD threats. Therefore front-end technologies have nowadays own built-in ESD protection, which is primarily intended to safeguard the semiconductor chip from electrostatic discharges during manufacture. However, overall ESD robustness at system level can only be achieved by implementing an external protection device.

When applied to high frequency circuits, the parasitic capacitance of the protection device must be kept at a minimum in order to not interfere with the signal performance. Designers should also choose devices providing low trigger and appropriate clamping voltages for the application.

A first-class protection addressing all the above is accomplished by the new ESD0P4RFL. This TVS diode is specially designed for ESD protection of RF antenna and also for high-speed data transmission lines. Its easy-to use Thin Small Leadless package (TSLP-4-7) has a reduced height (only 0.39mm), which makes this TVS diode the ideal solution for thin circuit architectures. Due to its extremely low inherent capacitance and inductance values, ESD0P4RFL is an optimal solution for RF/Antenna and also high speed interfaces.

Its low noise figure of only 0.1dB and high return loss of 20dB at 2GHz together with its low clamping voltage makes this diode ideal for protection of ESD sensitive Low Noise Amplifiers (LNA) operating in the gigahertz range.

ESD0P4RF: Key Features and Benefits

• ESD absorption capability up to ±15kV (contact) exceeding IEC 61000-4-2 standard level 4. No degradation even after multiple strikes.
• Extremely low and stable forward clamping voltage of 6V at 5A as per IEC 61000-4-5.
• Ultra low capacitance of only 0.4pF (0.2pF per diode) at 1GHz.
• Very small form of 1.2 x 0.8 x 0.39 mm3 for space-constrained applications.
• Ultra low series inductance of only 0.2nH (0.4nH per diode).
• Low noise figure of only 0.1dB at 2 GHz.
• High return loss of 20dB at 2GHz
• Extremely low reverse current of typically 20nA (at VR = 50V) helps to extend battery duration in battery-powered applications (in rail-to-rail configuration).
• RoHs-compliant
• Automotive qualified according to AEC-Q101.

Target Applications

• Applications in anti-parallel configuration: for low RF-signal levels without superimposed DC voltage like: GPS, XM-Radio, Sirius, DVB (Digital Video Broadcasting), DMB (Digital Multimedia Broadcasting), DAB (Digital Audio Broadcasting), and Remote Keyless Entry.
• Applications in rail-to-rail configuration including DC biased lines where the RF signal levels are do not approach the clamping reference voltages like; LNB interfaces, HDMI, S-ATA, and Gbit Ethernet.

The ESD0P4RFL belongs to Infineon’ ESDxPyRFz family and is in mass production. As for all Infineon products, it comes with the same superior quality level and benefit from the advantages that only a proven high volume system supplier can provide.

For further information please visit www.infineon.com/RFantennaprotection or contact your local Sasco Holz Branch Office.